描述
bsm50gd120dn2e3226
IGBT 模块 N-CH 1.2KV 50A
否
Infineon Technologies
IGBT Silicon Modules
Dual 集电极—发射极最大电压
600 V
1.95 V 在25
230 A
400 nA
445 W
+ 125 C
34MM
BSM50GD120DN2E3226
Siemens Ltd
SIEMENS
9
132 kb
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)